Hard Disk SSD
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Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare250 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashMaximum Random Read Rate150000 IOPSMaximum Random Write Rate180000 IOPSMaximum Sequential Read Ra
SAMSUNG 860 EVO 2TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare2 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache4 GBSSD ControllerSamsung MJXFlash Memory Cell
KINGSTON KC600 256G SSD, 2.5” 7mm, SATA 6 Gb/s, Read/Write: 550 / 500 MB/s, Random Read/Write IOPS 90K/80K
Locatie dispozitivInternFactor forma2.5" 7mmCapacitate de stocare256 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsSSD ControllerSMI SM2259Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Lev
SSD WD Blue SN550 250GB, M.2, PCIe NVMe Read/Write: 2400 / 950 MB/s, 170k/135k IOPS, TBW 150TB
Locatie dispozitivPlug-in ModuleFactor formaM.2 (2280)Capacitate de stocare250 GBSuporta canal de datePCIe NVMeRata de transfer extern a datelor sustinuta8 GbpsCertificariUL, TUV, FCC, BSMI, CE, KCC, RCM, Morocco, VCCI and CAN ICES-3(B)/NMB-3(B)Tehnologia
KINGSTON A2000 1000G SSD, M.2 2280, NVMe, Read/Write: 2200 / 2000 MB/s, Random Read/Write IOPS 250K/220K
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashMaximum Random Read Rate250000 IOPSMaximum Random Write Rate220000 IOPSMaximum Sequential Read Rate
MICRON 2200 256GB SSD, M.2 2280, PCIe Gen3 x4, Read/Write: 3000 / 1600 MB/s, Random Read/Write IOPS 240K/210K
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate240000 IOPSMaximum Random Wr
CRUCIAL P2 500GB SSD, M.2 2280, PCIe Gen3 x4, Read/Write: 2300/940 MB/s, Random Read/Write IOPS: 95K/215K
Locatie dispozitivInternFactor formaM.2 (2280)Capacitate de stocare500 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashAccesorii incluseScurt Ghid de utilizareMaximum Random Read Rate95000 IOPSMaximum Random Write Rate215000 IOPS
MICRON 1300 512GB SSD, 2.5” 7mm, SATA 6 Gb/s, Read/Write: 530 / 520 MB/s, Random Read/Write IOPS 90K/87K
Factor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsTehnologia pentru memorieNAND FlashMaximum Random Read Rate90000 IOPSMaximum Random Write Rate87000 IOPSMaximum Sequential
MICRON 1300 1TB SSD, 2.5” 7mm, SATA 6 Gb/s, Read/Write: 530 / 520 MB/s, Random Read/Write IOPS 90K/87K
Locatia dispozitivuluiPlug-in ModuleFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsTehnologia pentru memorieNAND FlashMaximum Random Read Rate90000 IOPSMaximum Random Writ
SAMSUNG 870 QVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 98K/88K
Locatie dispozitivInternFactor forma2.5" 7mmCapacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsSSD ControllerSamsung MKXTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level
Crucial SSD 1000GB P2 M.2 NVMe PCIEx4 80mm Micron 3D NAND 2300/1150 MB/s, 5yrs, EAN: 649528823472
Locatie dispozitivInternFactor formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4CertificariCE, FCC, VCCI, KC, RCM, ICES, Morocco, BSMI, Ukraine, UL, TUV, China RoHS, WEEETehnologia pentru memorieNAND FlashAccesorii incluseScurt
SSD WD Blue (2.5", 2TB, SATA III 6 Gb/s)
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare2 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCertificariFCC, UL, TUV, KC, BSMI, VCCIFlash Memory Cell TechnologyTriple-Level CellMaximum Ra